A reactive ion etching process

A reactive ion etching process controls the flow rate of at least one etchant gas used in said reactive ion etching process, the pressure of said at least one etchant gas; and the r.f. power used in said reactive ion etching process. The parameters of flow rate, pressure and r.f. power are selected...

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Main Authors ANDREW JAMES MCLAUGHLIN, CHRISTOPHER D W WILKINSON, MICHAEL GEORGE JUBBER, JESUS MIGUEL RUANO-LOPEZ, PAULO VICENTE DA SILVA MARQUES, JAMES STEWART AITCHISON, JAMES RONALD BONAR
Format Patent
LanguageEnglish
Published 19.12.2001
Edition7
Subjects
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Summary:A reactive ion etching process controls the flow rate of at least one etchant gas used in said reactive ion etching process, the pressure of said at least one etchant gas; and the r.f. power used in said reactive ion etching process. The parameters of flow rate, pressure and r.f. power are selected to obtain a desired etch rate and/or a desired level of material re-deposition in the reactive ion etching process.
Bibliography:Application Number: GB20010018719