Light emitting device with openings in p-contact

An AlInGaN light-emitting device (LED) includes a p-type contact 20 made of highly-reflective material with closely-spaced openings that increase light extraction efficiency. The minimum dimension of the openings is 1/4 of the wavelength of the emitted light and is preferably comparable to the dista...

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Bibliographic Details
Main Author STEVEN D LESTER
Format Patent
LanguageEnglish
Published 15.03.2000
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An AlInGaN light-emitting device (LED) includes a p-type contact 20 made of highly-reflective material with closely-spaced openings that increase light extraction efficiency. The minimum dimension of the openings is 1/4 of the wavelength of the emitted light and is preferably comparable to the distance current flows laterally in the p-layers of the device. The openings in the metal may occupy 20-80% of the top surface of the contact and are finely spaced to achieve transparency and uniform light emission. An optional dielectric encapsulant (Fig 4, 22) may be deposited over the p-type contact to improve its adhesion by tacking it down at regular intervals, and to improve light extraction. The surface of the epitaxial layers may be etched in the openings to scatter light in the semiconductor (Fig 5) increasing light extraction. A reflective layer 9 may be applied to the bottom surface of LED to increase the light extraction efficiency.
Bibliography:Application Number: GB19990021483