Monolithic step attenuator having internal frequency compensation

In the present invention a monolithic step attenuator has internal frequency compensation provided by a field effect transistor, or FET, fabricated to have a well defined drain-to-source capacitance. The drain-to-source capacitance of the FET cancels the effect of parasitic impedances, providing a c...

Full description

Saved in:
Bibliographic Details
Main Author ERIC R ELDERS
Format Patent
LanguageEnglish
Published 29.11.2000
Edition7
Subjects
BASIC ELECTRONIC CIRCUITRY
CONTROL OF AMPLIFICATION
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
Online AccessGet full text

Cover

More Information
Summary:In the present invention a monolithic step attenuator has internal frequency compensation provided by a field effect transistor, or FET, fabricated to have a well defined drain-to-source capacitance. The drain-to-source capacitance of the FET cancels the effect of parasitic impedances, providing a constant frequency response for the monolithic step attenuator within a defined frequency range. In a first embodiment of the present invention, internal frequency compensation is provided by a FET connected in a shunt arm of a Tee resistor network forming the monolithic step attenuator. In a second embodiment of the present invention, internal frequency compensation is provided by a pair of FETs, each FET connected in one of two shunt arms of a Pi resistor network forming the monolithic step attenuator. In a third embodiment of the present invention, a multicell step attenuator is formed by connecting multiple monolithic step attenuators having internal frequency compensation in series.
Bibliography:Application Number: GB19970005616