Method for fabricating capacitor

• Main Author: YEONG JIN PARK
• Format: Patent
• Language: English
• Published: 27.08.1997
• Edition: 6
• Subjects: ELECTRICITY

A method for fabricating a capacitor of a semiconductor device, capable of achieving an increase in effective surface area of a storage electrode in a limited area and thereby fabricating a semiconductor device having a very high integration degree. The method includes the steps of repeatedly forming a silicon layer doped with impurity ions and an undoped silicon layer at least once on a predetermined area where a storage electrode is to be formed, selectively etching the undoped and doped silicon layers, thereby forming a contact hole, forming an upper undoped silicon layer over the entire exposed surface of the resulting structure obtained after the formation of the contact hole, annealing the resulting structure obtained after the formation of the upper undoped silicon layer, and removing the doped silicon layer by use of an etch selectivity difference between the doped silicon layer and each of the undoped silicon layer.