SCHOTTKY DIODE MANUFACTURING PROCESS EMPLOYING THE SYNTHESIS OF A POLYCRYSTALLINE DIAMOND THIN FILM

A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH4, H2 and B2H6, forming an ohmic contact on the back of the p-type Si substrate, and forming...

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Bibliographic Details
Main Authors AKIMITSU NAKAUE, KOICHI MIYATA, KAZUO KUMAGAI, YUICHI MATSUI, KOJI KOBASHI
Format Patent
LanguageEnglish
Published 16.06.1993
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A schottky diode manufacturing process employing diamond film comprises forming a B-doped p-type polycrystalline diamond film on a low-resistance p-type Si substrate by CVD using a source gas consisting of CH4, H2 and B2H6, forming an ohmic contact on the back of the p-type Si substrate, and forming a metal electrode of Al, Pt Au, Ti or W on the B-doped p-type polycrystalline diamond film. The B/C concentration ratio of the source gas is greater than 0.01 ppm and less than 20 ppm.
Bibliography:Application Number: GB19900020362