METHOD FOR THE PREPARATION OF A MASK FOR X-RAY LITHOGRAPHY

A method of obtaining a mask for X-ray lithography having a thin oxidized metal membrane supported on an annular silicon base. The method consists of the following steps: (a) deposition of a metal layer on a silicon wafer; (b) oxidation of the metal layer to form a continuous thin oxide layer; (c) e...

Full description

Saved in:
Bibliographic Details
Main Author JOSEPH YAHALOM
Format Patent
LanguageEnglish
Published 21.04.1993
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
BASIC ELECTRIC ELEMENTS
CINEMATOGRAPHY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A method of obtaining a mask for X-ray lithography having a thin oxidized metal membrane supported on an annular silicon base. The method consists of the following steps: (a) deposition of a metal layer on a silicon wafer; (b) oxidation of the metal layer to form a continuous thin oxide layer; (c) etching selectively a portion of the backside of said substrate, obtaining a thin membrane of oxidized metal at the etched portion; and (d) obtaining a pattern delineation through a photoresist on said membrane framed by the silicon substrate. A most preferred deposited metal is aluminum which is converted to aluminum oxide. Then a portion of the silicon substrate is removed in order to expose the aluminum oxide membrane attached to the remaining silicon substrate. The mask prepared according to the present invention does not suffer from any distortion and preserves its accuracy even under the stresses incurred during the mask preparation and use.
Bibliography:Application Number: GB19890029271