MOSFET including current mirror FET

The drains Dp and Dm and gate electrodes Gp and Gm of a power MOSFET 1 and a current mirror MOSFET 2 are coupled in common. Diode devices 9, 10 for protecting the gate oxide film of the current mirror MOSFET are connected between the sources Sp, Sm of the two MOSFETs.

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Bibliographic Details
Main Authors TERUYOSHI MIHARA, NORIO FUJIKI, MASAKI HIROTA
Format Patent
LanguageEnglish
Published 25.04.1990
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The drains Dp and Dm and gate electrodes Gp and Gm of a power MOSFET 1 and a current mirror MOSFET 2 are coupled in common. Diode devices 9, 10 for protecting the gate oxide film of the current mirror MOSFET are connected between the sources Sp, Sm of the two MOSFETs.
Bibliography:Application Number: GB19890018344