Apparatus and a method for growing a crystal using a low-pressure Czochralski method and a crucible holder for use in such apparatus and method

• Main Authors: KEITH GORDON BARRACLOUGH, JOHN GEORGE WILKES
• Format: Patent
• Language: English
• Published: 14.10.1987
• Edition: 4
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMISTRY; CRYSTAL GROWTH; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A crucible holder for use in growing a crystal using a low-pressure Czochralski method is described. The crucible holder (1) is formed of graphite and is provided with a layer or coating (2) to prevent chemical reaction, in use of the crucible holder, at an interface between the crucible holder (1) and a crucible (20) held by the holder (1). In one arrangement where the crystal to be grown is a silicon crystal, the outer layer or coating (2) is formed of silicon carbide or possibly silicon nitride.