Apparatus and a method for growing a crystal using a low-pressure Czochralski method and a crucible holder for use in such apparatus and method

A crucible holder for use in growing a crystal using a low-pressure Czochralski method is described. The crucible holder (1) is formed of graphite and is provided with a layer or coating (2) to prevent chemical reaction, in use of the crucible holder, at an interface between the crucible holder (1)...

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Bibliographic Details
Main Authors KEITH GORDON BARRACLOUGH, JOHN GEORGE WILKES
Format Patent
LanguageEnglish
Published 14.10.1987
Edition4
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Summary:A crucible holder for use in growing a crystal using a low-pressure Czochralski method is described. The crucible holder (1) is formed of graphite and is provided with a layer or coating (2) to prevent chemical reaction, in use of the crucible holder, at an interface between the crucible holder (1) and a crucible (20) held by the holder (1). In one arrangement where the crystal to be grown is a silicon crystal, the outer layer or coating (2) is formed of silicon carbide or possibly silicon nitride.
Bibliography:Application Number: GB19860008646