Preparation of organometallic adducts of gallium and indium
A method of producing an adduct of an organometallic compound M(R )3 where M is either indium or gallium and (R )3 represents a plurality of organic radicals which may be the same or different, preferably methyl or ethyl groups, comprising electrolysing, using a sacrificial anode of the metal M, a s...
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Main Authors | , , , , |
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Format | Patent |
Language | English |
Published |
14.03.1984
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Subjects | |
Online Access | Get full text |
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Summary: | A method of producing an adduct of an organometallic compound M(R )3 where M is either indium or gallium and (R )3 represents a plurality of organic radicals which may be the same or different, preferably methyl or ethyl groups, comprising electrolysing, using a sacrificial anode of the metal M, a solution containing components 1 and 2 as follows: component 1: one or more organo- magnesium halide compounds R MgX where X is a halide radical selected from Cl, Br and I; where R represents one of the groups contained in (R )3; component 2: a polar aprotic liquid which is a solvent for component 1, eg tetrahydrofuran, diethyl ether, diisopentyl ether, di-n-butyl ether, diphenyl ether or anisole. Preferably, the solution electrolysed additionally contains a third component, component 3, which is one or more organic halides R XA, where R is one of the groups contained in (R )3, XA is a halide radical preferably the same as X, the polar aprotic liquid being a solvent also for component 3. |
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Bibliography: | Application Number: GB19830020130 |