VIDICON CAMERA TUBES

1391522 Image pick-up tubes SIEMENS AG 3 May 1972 [11 June 1971] 20524/72 Headings H1D and H1K A vidicon target comprises a weakly P-doped substrate of a III-V or a II-VI compound having a band interval of from I-3 eV and provided on one side with a transparent conductive layer adapted to form a Sch...

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Bibliographic Details
Format Patent
LanguageEnglish
Published 23.04.1975
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:1391522 Image pick-up tubes SIEMENS AG 3 May 1972 [11 June 1971] 20524/72 Headings H1D and H1K A vidicon target comprises a weakly P-doped substrate of a III-V or a II-VI compound having a band interval of from I-3 eV and provided on one side with a transparent conductive layer adapted to form a Schottky diode, the energy band distortion being such that the diode has a dark current of less than 10<-8> A./cm. The conductive layer may be of Au, Cu, Ni, Al, or Ag a few hundred A thick and may be deposited on the faceplate of the tube. The semiconductor is preferably PB, GaAs, GaP, InAs, InP, or of mixed crystals of one of these compounds, and should be a few microns thick; it may be of intrinsic material weakly P-doped on the side scanned by the beam. In one particular example the semiconductor is weakly P-doped GaP and the metal electrode is gold. The target may be used with incident light, but may also be designed for use with electrons, gamma rays or alpha rays.
Bibliography:Application Number: GB19720020524