DISPOSITIF PHOTOVOLTAIQUE TANDEM COMPRENANT UNE SOUS-CELLULE A BASE DE PEROVSKITE ET UNE SOUS-CELLULE A BASE DE SILICIUM

The invention relates to a tandem photovoltaic device comprising: a sub-cell A based on perovskite, and a sub-cell B with a silicon heterojunction, the sub-cell A successively containing: a hole transport layer HTL which is a double layer consisting of a neutral layer HTL-N based on PEDOT:PSS and an...

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Bibliographic Details
Main Authors MUNOZ, MARIA-DELFINA, MANCEAU, MATTHIEU, BERSON, SOLENN
Format Patent
LanguageFrench
Published 07.12.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a tandem photovoltaic device comprising: a sub-cell A based on perovskite, and a sub-cell B with a silicon heterojunction, the sub-cell A successively containing: a hole transport layer HTL which is a double layer consisting of a neutral layer HTL-N based on PEDOT:PSS and an acid layer HTL-A based on PEDOT:PSS, the PEDOT being poly(3,4-ethylenedioxythiophene) and the PSS being poly(4-styrenesulfonate), an active layer based on perovskite, and an electron transport layer ETLA, the HTL-A layer being in direct contact with the active layer based on perovskite.
Bibliography:Application Number: FR20160062472