PROCEDE DE COLLAGE DIRECT METAL-METAL

A method for assembling a first substrate and a second substrate by metal-metal direct bonding, includes providing a first layer of a metal at the surface of the first substrate and a second layer of the metal at the surface of the second substrate, the first and second metal layers having a tensile...

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Bibliographic Details
Main Authors GONDCHARTON, PAUL, MORICEAU, HUBERT, IMBERT, BRUNO
Format Patent
LanguageFrench
Published 03.08.2018
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for assembling a first substrate and a second substrate by metal-metal direct bonding, includes providing a first layer of a metal at the surface of the first substrate and a second layer of the metal at the surface of the second substrate, the first and second metal layers having a tensile stress (σi) between 30% and 100% of the tensile yield strength (σe) of the metal; assembling the first and second substrates at a bonding interface by directly contacting the first and second tensile stressed metal layers; and subjecting the assembly of the first and second substrates to a stabilization annealing at a temperature lower than or equal to a temperature threshold beyond which the first and second tensile stressed metal layers are plastically compressively deformed.
Bibliography:Application Number: FR20160056818