DISPOSITIFS METAL-OXYDE-SEMICONDUCTEUR (MOS) A PLUS GRAND POURTOUR DE CANAUX ET PROCEDES DE FABRICATION

A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. Further, the chan...

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Bibliographic Details
Main Authors LOSEE PETER ALMERN, BOLOTNIKOV ALEXANDER VIKTOROVICH
Format Patent
LanguageFrench
Published 22.12.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a silicon carbide (SiC) drift layer disposed on a (0001) oriented SiC substrate. The SiC drift layer has a non-planar surface including a plurality of repeating features that are oriented parallel to a length of a channel of the semiconductor device. Further, the channel region is disposed in a particular crystallographic plane of the SiC drift layer.
Bibliography:Application Number: FR20140056024