PROCÉDÉ POUR RÉALISER UN GUIDE OPTIQUE A FENTE SUR SILICIUM

The method involves depositing a thin single-crystal silicon layer on a silicon substrate (10) covered with an insulating buried layer (12), and uniformly depositing a semi-insulating or insulating layer on a silicon layer. Local thermal oxidation is performed in depth of the silicon layer, before u...

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Bibliographic Details
Main Authors ZIEBELL MELISSA, RASIGADE GILLES, MARRIS-MORINI DELPHINE, VIVIEN LAURENT, FEDELI JEAN-MARC, DUAN GUANG-HUA
Format Patent
LanguageFrench
Published 28.12.2012
Subjects
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
OPTICS
PHYSICS
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Summary:The method involves depositing a thin single-crystal silicon layer on a silicon substrate (10) covered with an insulating buried layer (12), and uniformly depositing a semi-insulating or insulating layer on a silicon layer. Local thermal oxidation is performed in depth of the silicon layer, before uniform deposition of the semi-insulating or insulating layer, for forming an insulating oxidized band extending along a path of a semi-insulating or insulating vertical wall under and on both sides of the wall on entire length of the path, such that the wall is not adjacent to the silicon layer.
Bibliography:Application Number: FR20100060438