CIRCUIT INTÉGRÉ COMPRENANT DEUX TYPES DE CONDENSATEURS, EN PARTICULIER UN CONDENSATEUR DE POINT-MÉMOIRE DRAM ET UN CONDENSATEUR DE DÉCOUPLAGE, ET PROCÉDÉ DE FABRICATION CORRESPONDANT

The method involves realizing a trench in an insulating region of an integrated circuit (CI). An upper electrode (ASUP) of a capacitor (CDA) of a dynamic RAM memory cell is realized. A metal layer (EAB) is formed on a dielectric material and the insulating region. A lower electrode (BINF) of an addi...

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Bibliographic Details
Main Authors JEANNOT SIMON, CREMER SEBASTIEN
Format Patent
LanguageFrench
Published 21.12.2012
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:The method involves realizing a trench in an insulating region of an integrated circuit (CI). An upper electrode (ASUP) of a capacitor (CDA) of a dynamic RAM memory cell is realized. A metal layer (EAB) is formed on a dielectric material and the insulating region. A lower electrode (BINF) of an additional capacitor (CDB1) is formed in the metal layer, where the formation of the lower electrode of the additional capacitor in the metal layer is same as that of a portion of the upper electrode of the capacitor of the memory cell. An independent claim is also included for an integrated circuit including a capacitor of a dynamic RAM memory cell.
Bibliography:Application Number: FR20100059296