PROCÉDÉ DE FABRICATION D'UN SUBSTRAT COMPRENANT DES ILOTS MÉTALLIQUES ORGANISES

The invention relates to a method for manufacturing a substrate including organised islands consisting of a metal such as Ni, Pt, Ir, or Pd, suitable for the controlled growth of nanowires/nanotubes, said method including the following steps: forming a layer of the metal on an exposed top surface of...

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Bibliographic Details
Main Authors MADAR ROLAND, CHENEVIER BERNARD
Format Patent
LanguageFrench
Published 12.10.2012
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The invention relates to a method for manufacturing a substrate including organised islands consisting of a metal such as Ni, Pt, Ir, or Pd, suitable for the controlled growth of nanowires/nanotubes, said method including the following steps: forming a layer of the metal on an exposed top surface of silicon; carrying out annealing in order to completely convert the metal layer into a layer of a silicide of said metal; exposing the top surface to a low-temperature oxygen plasma in order to form an oxysilicide of the metal; and exposing the top surface to a low-temperature hydrogen plasma, which results in obtaining grains of the metal in a silicon oxide layer.
Bibliography:Application Number: FR20100057685