DEPOT PEALD D'UN MATERIAU A BASE DE SILICIUM

The method involves exposing a substrate to an organometallic silicon precursor e.g. bis t-butylaminosilane (BTBAS). The plasma of another precursor e.g. precursor of nitrogen or oxygen, different from the organometallic silicon precursor, is applied to the substrate by controlling a parameter e.g....

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Bibliographic Details
Main Authors REGOLINI JORGE LUIS, BENOIT DANIEL, GROS JEAN MICHAEL
Format Patent
LanguageFrench
Published 12.09.2008
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The method involves exposing a substrate to an organometallic silicon precursor e.g. bis t-butylaminosilane (BTBAS). The plasma of another precursor e.g. precursor of nitrogen or oxygen, different from the organometallic silicon precursor, is applied to the substrate by controlling a parameter e.g. partial pressures of precursors. A purging operation is performed between the exposition of the substrate and the application of the plasma.
Bibliography:Application Number: FR20060003684