TRANSISTOR A COUCHES MINCES ORGANIQUES ET PROCEDE POUR SA FABRICATION

An organic thin film transistor has a gate electrode (112) formed on a substrate (110), a gate insulation layer (114) formed on the gate electrode, a source/drain electrode (116a,116b) overlapped with both edges of gate electrode and formed on the gate insulation layer, an organic semiconductor laye...

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Bibliographic Details
Main Authors HAN CHANG WOOK, LEE JAE YOON
Format Patent
LanguageFrench
Published 04.11.2011
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Summary:An organic thin film transistor has a gate electrode (112) formed on a substrate (110), a gate insulation layer (114) formed on the gate electrode, a source/drain electrode (116a,116b) overlapped with both edges of gate electrode and formed on the gate insulation layer, an organic semiconductor layer (120) formed on the gate insulation layer, a hydrophilic adhesive layer (114a) and a hydrophobic adhesive layer (114b). The adhesive layers are formed between the gate insulation layer and the source/drain electrode, and between the organic semiconductor layer and the gate insulation layer, respectively. An independent claim is included for the production of an organic thin film transistor.
Bibliography:Application Number: FR20060010453