PROCEDE DE FABRICATION D'UN CIRCUIT INTEGRE COMPRENANT UN CONDENSATEUR AVEC UNE ELECTRODE EN CUIVRE

The process and integrated circuit include at least one capacitor in which at least one of the electrodes is made of copper. The method includes forming a nitrogen-doped silicon carbide film between the copper electrode and the dielectric film of the capacitor.

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Bibliographic Details
Main Authors MICHAILOS JEAN, CASANOVA NICOLAS, GROS JEAN MICHAEL
Format Patent
LanguageFrench
Published 20.07.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The process and integrated circuit include at least one capacitor in which at least one of the electrodes is made of copper. The method includes forming a nitrogen-doped silicon carbide film between the copper electrode and the dielectric film of the capacitor.
Bibliography:Application Number: FR20050003892