DISPOSITIF OPTIQUE SEMI-CONDUCTEUR SUR SUBSTRAT EN PHOSPHURE D'INDIUM POUR GRANDES LONGUEURS D'ONDE DE FONCTIONNEMENT

A semiconductor optical device (100) comprises: (a) a substrate (1) with a base of indium phosphide; (b) an active layer (32) having a composition adjusted for an operating wavelength greater than 1.5 mu m which contains a concentration x of gallium, a concentration 1-x of indium and a concentration...

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Bibliographic Details
Main Authors ALEXANDRE FRANCOIS, THEDREZ BRUNO, GENTNER JEAN LOUIS
Format Patent
LanguageFrench
Published 07.10.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:A semiconductor optical device (100) comprises: (a) a substrate (1) with a base of indium phosphide; (b) an active layer (32) having a composition adjusted for an operating wavelength greater than 1.5 mu m which contains a concentration x of gallium, a concentration 1-x of indium and a concentration y of arsenic, where x is greater than or equal to 0.48; (c) the composition also includes a concentration z of nitrogen of less than or equal to 0.05 and the concentration y is essentially equal to 1-z.
Bibliography:Application Number: FR20030008770