PROCEDE DE FORMATION D'UNE COUCHE D'OXYDE D'EPAISSEUR NON-UNIFORME A LA SURFACE D'UN SUBSTRAT DE SILICIUM
The invention concerns a method comprising steps which consist in: a) implanting in predetermined zones of the substrate an efficient dose of atoms of a species accelerating the substrate oxidation kinetics; and b) growing by oxidation a silicon oxide film with non-uniform thickness on the substrate...
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Main Authors | , |
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Format | Patent |
Language | French |
Published |
04.02.2000
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | The invention concerns a method comprising steps which consist in: a) implanting in predetermined zones of the substrate an efficient dose of atoms of a species accelerating the substrate oxidation kinetics; and b) growing by oxidation a silicon oxide film with non-uniform thickness on the substrate surface. The invention is useful for producing oxide films for MOS transistor grids.
Le procédé comprend :a) l'implantation dans des zones prédéterminées du substrat d'une dose effective d'atomes d'une espèce chimique accélérant la cinétique d'oxydation du substrat; etb) la croissance par oxydation d'une couche d'oxyde de silicium d'épaisseur non-uniforme sur la surface du substrat. Application à la fabrication des couches d'oxyde de grille de transistors MOS. |
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Bibliography: | Application Number: FR19980009607 |