TRANSISTOR MOS A FAIBLE RESISTANCE DE DRAIN
A novel MOS transistor has an L-shaped spacer (71, 72) on each side of its gate, with the vertical limb of the L resting against the gate, and has doped source and drain regions including a first doped zone (73, 74) below the horizontal limb of each L, a second more heavily doped zone (75, 76) beyon...
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Main Authors | , , |
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Format | Patent |
Language | French |
Published |
02.07.1999
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Edition | 6 |
Subjects | |
Online Access | Get full text |
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Summary: | A novel MOS transistor has an L-shaped spacer (71, 72) on each side of its gate, with the vertical limb of the L resting against the gate, and has doped source and drain regions including a first doped zone (73, 74) below the horizontal limb of each L, a second more heavily doped zone (75, 76) beyond each L and preferably a third more lightly doped zone (31, 32) below the vertical limb of each L. Also claimed is production of a MOS transistor with stepped drain and source doping levels by forming an L-shaped silicon nitride spacer (71, 72) on each side of a gate region (5) and carrying out implantation only partially masked by the horizontal limb of each L. |
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Bibliography: | Application Number: FR19970002458 |