TRAITEMENT ANTI-REFLET DE SURFACES REFLECTIVES

A process for photolithography of a layer (3) below a photosensitive resin layer (5) in IC manufacture involves forming a porous layer (4) of the same material and of given thickness within and at the surface of the layer (3) to be lithographically structured, prior to deposition of the resin. Prefe...

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Bibliographic Details
Main Authors SCHILTZ ANDRE, FRANCOU JEAN MARC, HALIMAOUI AOMAR
Format Patent
LanguageFrench
Published 18.06.1999
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process for photolithography of a layer (3) below a photosensitive resin layer (5) in IC manufacture involves forming a porous layer (4) of the same material and of given thickness within and at the surface of the layer (3) to be lithographically structured, prior to deposition of the resin. Preferably, the layer (3) to be lithographically structured consist of a conductive or semiconductive material, especially a silicon semiconductor material which can form porous silicon by chemical treatment in a bath containing a silicone type surfactant.
Bibliography:Application Number: FR19960016106