ASSEMBLAGE MONOLITHIQUE D'UN TRANSISTOR IGBT ET D'UNE DIODE RAPIDE

• Main Author: QUOIRIN JEAN BAPTISTE
• Format: Patent
• Language: French
• Published: 27.11.1998
• Edition: 6
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The structure includes a vertical high speed diode connected to the drain of an insulated gate bipolar transistor (IGBT), formed in an n-type semiconductor substrate (1), the back face consisting of a p-type layer (2) with openings for exposing the substrate. The back surface is covered with a metal...