ASSEMBLAGE MONOLITHIQUE D'UN TRANSISTOR IGBT ET D'UNE DIODE RAPIDE

The structure includes a vertical high speed diode connected to the drain of an insulated gate bipolar transistor (IGBT), formed in an n-type semiconductor substrate (1), the back face consisting of a p-type layer (2) with openings for exposing the substrate. The back surface is covered with a metal...

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Bibliographic Details
Main Author QUOIRIN JEAN BAPTISTE
Format Patent
LanguageFrench
Published 27.11.1998
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The structure includes a vertical high speed diode connected to the drain of an insulated gate bipolar transistor (IGBT), formed in an n-type semiconductor substrate (1), the back face consisting of a p-type layer (2) with openings for exposing the substrate. The back surface is covered with a metal layer (10) which produces Schottky contact with the substrate and ohmic contact with the p-type layer. On the front face of the structure is an n<+>-type region (17) which is formed in the substrate and acts as the cathode of the diode with a p<+>-type deep diffusion (19) occupying the periphery of the structure.
Bibliography:Application Number: FR19960009680