MODULATEUR ELECTRO-OPTIQUE A PUITS QUANTIQUES

The modulator is obtained on a III-V semiconductor substrate, e.g. PI, and includes an n- doped layer, an active layer (CA) and a p-doped layer (3). An additional layer (5) of a given thickness (d1) is deposited between the active layer and the p-doped layer. This additional layer is transparent to...

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Bibliographic Details
Main Authors STARCK CHRISTOPHE, LESTERLIN DOMINIQUE
Format Patent
LanguageFrench
Published 12.06.1998
Edition6
Subjects
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Summary:The modulator is obtained on a III-V semiconductor substrate, e.g. PI, and includes an n- doped layer, an active layer (CA) and a p-doped layer (3). An additional layer (5) of a given thickness (d1) is deposited between the active layer and the p-doped layer. This additional layer is transparent to the wavelength modulated by the device.
Bibliography:Application Number: FR19960005371