COMPOSANT DE PROTECTION COMPLET DE CIRCUIT D'INTERFACE DE LIGNES D'ABONNES

The component is integrated on an n-type substrate whose rear face is coated with uniform metallisation (G) for earthing. Two portions (23,24) are separated by a p-type insulating wall. One portion (24) comprises two vertical diodes (e.g. D1) having a common earthed cathode, and two vertical transis...

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Bibliographic Details
Main Author BERNIER ERIC
Format Patent
LanguageFrench
Published 25.07.1997
Edition6
Subjects
BASIC ELECTRIC ELEMENTS
CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
ELECTRIC COMMUNICATION TECHNIQUE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
GENERATION
SELECTING
SEMICONDUCTOR DEVICES
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Summary:The component is integrated on an n-type substrate whose rear face is coated with uniform metallisation (G) for earthing. Two portions (23,24) are separated by a p-type insulating wall. One portion (24) comprises two vertical diodes (e.g. D1) having a common earthed cathode, and two vertical transistors (e.g. T1) having a common earthed collector. The other portion (23) has two pairs of vertical thyristors (th1,th2) in inverse-parallel relationship whose conduction is controlled by pairs of vertical Zener diodes (z1,z2). Each p-well (P3,P4) in the first portion (only half of which is depicted) is surrounded by an n-type ring.
Bibliography:Application Number: FR19950005877