Target element for cathodic sputtering, process for the preparation of the said element and targets, especially over a large area, produced from this element

• Main Authors: CAMPET GUY, SALARDENNE JEAN, CHABAGNO JEAN-MICHEL, PORTIER JOSEPH, DELMAS CLAUDE
• Format: Patent
• Language: English; French
• Published: 05.03.1993
• Subjects: CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

The target element (2) is formed from an inorganic compound layer (16) with a melting point above 300 DEG C deposited on a foam or metallic felt support layer such that the layer of inorganic compound sinks to part of its depth into the support layer to define a composite layer (17). In order to form the target element, a precursor system of the inorganic compound is applied to the support layer, the assembly so formed is subjected to a pressure of between 0.1 MPa and 15 MPa, the resulting assembly is maintained at between 300 DEG C and 1600 DEG C and below the melting temperature of the support in order to obtain a sintered assembly. Said assembly is then cooled to an ambient temperature avoiding any sudden cooling. In order to produce the target, the element (2) is glued to a metallic substrate (4) using a conductive adhesive. L'élément de cible (2) est formé d'une couche (16) d'un composé inorganique fondant au-dessus de 300degré C déposée sur une couche support en mousse ou feutre métallique de telle sorte que la couche du composé inorganique pénètre sur une partie de son épaisseur dans la couche support pour définir une couche composite (17). Pour former l'élément de cible, on applique un système précurseur du composé inorganique sur la couche support, on soumet l'ensemble obtenu à une pression allant de 0,1 MPa à 15 MPa, on maintient l'ensemble résultant entre 300degré C et 1600degré C et en-dessous de la température de fusion du support pour obtenir un ensemble fritté, puis on refroidit ledit ensemble jusqu'à l'ambiante en évitant toute trempe. Pour produire la cible, l'élément (2) est collé sur un substrat (4) métallique à l'aide d'un adhésif conducteur (3).