PROCEDE DE LIAISON D'UNE FEUILLE DE CUIVRE A UN SUBSTRAT EN MATERIAU ELECTRIQUEMENT ISOLANT

• Main Authors: JANNICK GUINET, JEAN-CLAUDE HUBERT, MARIE-FRANCOIS MARTIAL
• Format: Patent
• Language: French
• Published: 12.05.1989
• Subjects: ARTIFICIAL STONE; BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; CEMENTS; CERAMICS; CHEMISTRY; CLADDING OR PLATING BY SOLDERING OR WELDING; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS; CONCRETE; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LIME, MAGNESIA; MACHINE TOOLS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; PERFORMING OPERATIONS; PRINTED CIRCUITS; REFRACTORIES; SEMICONDUCTOR DEVICES; SLAG; SOLDERING OR UNSOLDERING; TRANSPORTING; TREATMENT OF NATURAL STONE; WELDING; WORKING BY LASER BEAM

La présente invention concerne un procédé de liaison directe d'une feuille de cuivre à un substrat en matériau électriquement isolant, avec chauffage de l'ensemble cui- vre/substrat en vue de l'obtention d'un eutectique. Le procédé selon l'invention consiste à nettoyer 12 le cuivre 10 pour éliminer les traces d'oxydation en surface de celui-ci avant de placer le cuivre sur le substrat 20, à chauffer 301 l'ensemble cuivre/substrat sous atmosphère neutre jusqu'à l'obtention d'une température supérieure à la température de formation de l'eutectique, et à n'appliquer le gaz réactif oxydant 302 qu'après obtention de la température supérieure à la température de formation de l'eutectique, de telle sorte que celle-ci soit atteinte avant toute oxydation de la surface du cuivre 10. Disclosed is a method for the direct bonding of a copper sheet to a substrate made of an electrically insulating material, with the heating of the copper/substrate set in order to obtain a eutectic mixture. The method according to the invention consists in cleaning the copper to eliminate traces of oxidation on its surface before placing said copper on the substrate, in heating the copper/substrate set under a neutral atmosphere until a temperature greater than the temperature for the formation of the eutectic mixture is reached, and in applying the oxidating reactive gas only after the temperature greater than the temperature for the formation of the eutectic mixture is reached, in such a way that this temperature is reached before any oxidation of the surface of the copper.