DISPOSITIF DE MEMOIRE A SEMICONDUCTEURS

L'INVENTION CONCERNE UN DISPOSITIF DE MEMOIRE A SEMICONDUCTEURS.CE DISPOSITIF COMPREND UN RESEAU DE CELLULES DE MEMOIRE 1 COMPORTANT UNE PLURALITE DE CELLULES DE MEMOIRE SITUEES DANS DIFFERENTES MATRICES 1A-1D, UN CIRCUIT DE COMMUTATION G, G, G-G, G-G COMPORTANT UNE PLURALITE DE BORNES D'E...

Full description

Saved in:
Bibliographic Details
Main Author YOSHIAKI OUCHI, MASAMICHI ISHIHARA, TETSURO MATSUMOTO ET KAZUYUKI MIYAZAWA
Format Patent
LanguageFrench
Published 30.03.1984
Subjects
Online AccessGet full text

Cover

Loading…
Abstract L'INVENTION CONCERNE UN DISPOSITIF DE MEMOIRE A SEMICONDUCTEURS.CE DISPOSITIF COMPREND UN RESEAU DE CELLULES DE MEMOIRE 1 COMPORTANT UNE PLURALITE DE CELLULES DE MEMOIRE SITUEES DANS DIFFERENTES MATRICES 1A-1D, UN CIRCUIT DE COMMUTATION G, G, G-G, G-G COMPORTANT UNE PLURALITE DE BORNES D'ENTREESORTIE MENAGEES DE MANIERE A CORRESPONDRE ET A ETRE RACCORDEES AUX BORNES D'ENTREESORTIE DUDIT RESEAU DE CELLULES DE MEMOIRE DE FACON BI-UNIVOQUE, DES BORNES DE COMMANDE ET UNE BORNE COMMUNE D'ENTREESORTIE, UN CIRCUIT D'ENTREESORTIE 8, 9 COMPORTANT DES BORNES D'ENTREESORTIE, UN CIRCUIT DE COMMANDE 5A, 5B, 6 DELIVRANT DES SIGNAUX DE COMMANDE ET UN CIRCUIT DE SELECTION 4, 7, 9 REALISANT UNE SELECTION EN FONCTION DE SIGNAUX D'ADRESSES ENVOYES AU CIRCUIT DE COMMANDE.APPLICATION NOTAMMENT AUX MEMOIRES RAM DYNAMIQUES. An address multiplex type system for a dynamic RAM includes a memory cell array having a plurality of memory cells which are simultaneously selected by signals output from an address decoder, a decoder, and a shift register. The dynamic RAM further includes a selecting circuit which receives a plurality of address signals applied externally through one of a plurality of pins of a package in a time-sharing manner and makes it possible to write or read data into or from one memory cell of the plurality of memory cells selected. The dynamic RAM can read out or write in serially data of a plurality of memory cells selected from the memory cell array when a shift register operates. The dynamic RAM can also read or write data serially into or from a plurality of memory cells selected from the memory cell array simply by connecting the pin to a predetermined potential. When the data is written or read serially, the pin arrangement of the package of a 256K bit dynamic RAM can be substantially the same as that of the package of a 64K bit dynamic RAM. Hence, compatibility can be established between the 256K bit dynamic RAM and a 64K bit dynamic RAM.
AbstractList L'INVENTION CONCERNE UN DISPOSITIF DE MEMOIRE A SEMICONDUCTEURS.CE DISPOSITIF COMPREND UN RESEAU DE CELLULES DE MEMOIRE 1 COMPORTANT UNE PLURALITE DE CELLULES DE MEMOIRE SITUEES DANS DIFFERENTES MATRICES 1A-1D, UN CIRCUIT DE COMMUTATION G, G, G-G, G-G COMPORTANT UNE PLURALITE DE BORNES D'ENTREESORTIE MENAGEES DE MANIERE A CORRESPONDRE ET A ETRE RACCORDEES AUX BORNES D'ENTREESORTIE DUDIT RESEAU DE CELLULES DE MEMOIRE DE FACON BI-UNIVOQUE, DES BORNES DE COMMANDE ET UNE BORNE COMMUNE D'ENTREESORTIE, UN CIRCUIT D'ENTREESORTIE 8, 9 COMPORTANT DES BORNES D'ENTREESORTIE, UN CIRCUIT DE COMMANDE 5A, 5B, 6 DELIVRANT DES SIGNAUX DE COMMANDE ET UN CIRCUIT DE SELECTION 4, 7, 9 REALISANT UNE SELECTION EN FONCTION DE SIGNAUX D'ADRESSES ENVOYES AU CIRCUIT DE COMMANDE.APPLICATION NOTAMMENT AUX MEMOIRES RAM DYNAMIQUES. An address multiplex type system for a dynamic RAM includes a memory cell array having a plurality of memory cells which are simultaneously selected by signals output from an address decoder, a decoder, and a shift register. The dynamic RAM further includes a selecting circuit which receives a plurality of address signals applied externally through one of a plurality of pins of a package in a time-sharing manner and makes it possible to write or read data into or from one memory cell of the plurality of memory cells selected. The dynamic RAM can read out or write in serially data of a plurality of memory cells selected from the memory cell array when a shift register operates. The dynamic RAM can also read or write data serially into or from a plurality of memory cells selected from the memory cell array simply by connecting the pin to a predetermined potential. When the data is written or read serially, the pin arrangement of the package of a 256K bit dynamic RAM can be substantially the same as that of the package of a 64K bit dynamic RAM. Hence, compatibility can be established between the 256K bit dynamic RAM and a 64K bit dynamic RAM.
Author YOSHIAKI OUCHI, MASAMICHI ISHIHARA, TETSURO MATSUMOTO ET KAZUYUKI MIYAZAWA
Author_xml – fullname: YOSHIAKI OUCHI, MASAMICHI ISHIHARA, TETSURO MATSUMOTO ET KAZUYUKI MIYAZAWA
BookMark eNrjYmDJy89L5WRQd_EMDvAP9gzxdFNwcVXwdfX19wxyVXBUCHb19XT293MJdQ5xDQ0K5mFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8W5BRqbGxubGFo6GxkQoAQCLwiVL
ContentType Patent
DBID EVB
DatabaseName esp@cenet
DatabaseTitleList
Database_xml – sequence: 1
  dbid: EVB
  name: esp@cenet
  url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP
  sourceTypes: Open Access Repository
DeliveryMethod fulltext_linktorsrc
Discipline Medicine
Chemistry
Sciences
Physics
ExternalDocumentID FR2533738A1
GroupedDBID EVB
ID FETCH-epo_espacenet_FR2533738A13
IEDL.DBID EVB
IngestDate Fri Jul 19 12:56:58 EDT 2024
IsOpenAccess true
IsPeerReviewed false
IsScholarly false
Language French
LinkModel DirectLink
MergedId FETCHMERGED-epo_espacenet_FR2533738A13
Notes Application Number: FR19830012883
OpenAccessLink https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19840330&DB=EPODOC&CC=FR&NR=2533738A1
ParticipantIDs epo_espacenet_FR2533738A1
PublicationCentury 1900
PublicationDate 19840330
PublicationDateYYYYMMDD 1984-03-30
PublicationDate_xml – month: 03
  year: 1984
  text: 19840330
  day: 30
PublicationDecade 1980
PublicationYear 1984
RelatedCompanies HITACHI LTD
RelatedCompanies_xml – name: HITACHI LTD
Score 2.364894
Snippet L'INVENTION CONCERNE UN DISPOSITIF DE MEMOIRE A SEMICONDUCTEURS.CE DISPOSITIF COMPREND UN RESEAU DE CELLULES DE MEMOIRE 1 COMPORTANT UNE PLURALITE DE CELLULES...
SourceID epo
SourceType Open Access Repository
SubjectTerms INFORMATION STORAGE
PHYSICS
STATIC STORES
Title DISPOSITIF DE MEMOIRE A SEMICONDUCTEURS
URI https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=19840330&DB=EPODOC&locale=&CC=FR&NR=2533738A1
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT4MwFH9Z5udNUeP8CgeDJyKBCvNAzAYlwwRY-DC7LaXQZJe5DIz_vo-6TS966eE1eW1_ya_tr32vBbg3CWfM4JZu2cTWCSeVzsqyQqniiKHgrDLl0UAU25OCvM6eZj1YbHNh5Duhn_JxRGQUR763cr5e_Rxi-TK2snksF2h6fwly19eq73QxVCuozzV_7NJp4iee5nlukGpx6pq4rXGs4QiF0h7uop2ODPRt3CWlrH6vKMEJ7E_R2bI9hZ5YK3DkbT9eU-Aw2tx3K3AgAzR5g8YNCZszeOgiPpIszMNA9aka0SgJU6qO1KzDNIn9wstpkWbnoAY09yY6tj3fjXMepLteWhfQR_lfX4JaPxsMSSIE4Zw4FULL7FLUHIULFlY5gMGfbq7-qbuG4w4wmV9n3EC_XX_Ut7jAtuWdhOYL-Sl8og
link.rule.ids 230,309,783,888,25576,76876
linkProvider European Patent Office
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3NT4MwFH9Z5se8KWqcnxwMnogEKswDMRuUgA5Y-DC7ESiQ7KLLwPjv-6jb9KKXHl6T1_aX_Nr-2vdagFuVsDxXmCZrOtFlwkgp50VRolQx6lHN8lLlRwN-oLspeZ4_zHuw2OTC8HdCP_njiMgohnxv-Xy9_DnEsnlsZXNfLND0_uQkpi2V3-liqFZQn0v2xKSz0A4tybJMJ5KCyFRxW2NoozEKpR3cYRsdGejrpEtKWf5eUZxD2J2hs7f2CHr1SoCBtfl4TYB9f33fLcAeD9BkDRrXJGyO4a6L-AhjL_Ec0aaiT_3Qi6g4FuMO0zCwUyuhaRSfgOjQxHJlbDvbjjNzom0vtVPoo_yvzkCsHpUcSVLXhDFilAhtrhd1xVC4YKEVQxj-6eb8n7obGLiJP82mXvByAQcdeDzXTrmEfrv6qK5wsW2Law7TF_wMf5U
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=DISPOSITIF+DE+MEMOIRE+A+SEMICONDUCTEURS&rft.inventor=YOSHIAKI+OUCHI%2C+MASAMICHI+ISHIHARA%2C+TETSURO+MATSUMOTO+ET+KAZUYUKI+MIYAZAWA&rft.date=1984-03-30&rft.externalDBID=A1&rft.externalDocID=FR2533738A1