DISPOSITIF INTEGRE COMPRENANT UN THYRISTOR OU UN TRANSISTOR BIPOLAIRE AVEC COMMANDE DU BLOCAGE ET DU DEBLOCAGE PAR TRANSISTORS A EFFET DE CHAMP
MOSFET-gated bipolar transistor and thyristor integrated devices combining, as the respective turn-on and turn-off control devices, an enhancement mode MOSFET and a depletion mode MOSFET. The gates of the two MOSFETs are connected to a single device gate terminal. The conduction channel of the deple...
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Main Author | |
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Format | Patent |
Language | French |
Published |
14.03.1986
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Edition | 4 |
Subjects | |
Online Access | Get full text |
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