DISPOSITIF INTEGRE COMPRENANT UN THYRISTOR OU UN TRANSISTOR BIPOLAIRE AVEC COMMANDE DU BLOCAGE ET DU DEBLOCAGE PAR TRANSISTORS A EFFET DE CHAMP

MOSFET-gated bipolar transistor and thyristor integrated devices combining, as the respective turn-on and turn-off control devices, an enhancement mode MOSFET and a depletion mode MOSFET. The gates of the two MOSFETs are connected to a single device gate terminal. The conduction channel of the deple...

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Bibliographic Details
Main Author MICHAEL STUART ADLER
Format Patent
LanguageFrench
Published 14.03.1986
Edition4
Subjects
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