Prodn. of a diode in amorphous silicon - suitable for integrated mounting on a liquid crystal visualisation screen

• Main Author: NICOLAS SZYDLO, ERIC CHARTIER, NICOLE PROUST, DANIEL KAPLAN, JOSE MAGARINO ET SERGE LE BERRE
• Format: Patent
• Language: English; French
• Published: 24.06.1983
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

The diode in amorphous silicon has at least three layers of different doping levels deposited on a substrate. During fabrication there is a stage of deposit by the thermal decomposition of a gaseous mixture and a thermal treatment stage in an atmosphere with a density greater than that of atomic hydrogen, both stages taking place at a temp. less than the crystallisation temp. of silicon. The thermal decomposition stage to produce a p-i-n type diode includes a first stage of depositing a p+ type layer from a gaseous mixture of molecular hydrogen, and silane or a mixture of polysilanes and diborane, a second stage of depositing an undoped layer from a gaseous mixture containing molecular hydrogen and silane or a mixture of polysilanes and a third stage of depositing a layer type n+ from a gaseous mixture of molecular hydrogen and silane or a mixture of polysilanes and phosphine. The thermal treatment stage either takes place after the deposit of the last layer of amorphous silicon or after one of the intermediary layers of amorphous silicon. In thermoelectric displays using liquid crystals. The diodes have electrical characteristics and physical dimensions allowing them to be directly joined onto the substrate of the screen of visualisation. PROCEDE DE REALISATION D'UNE DIODE EN SILICIUM AMORPHE COMPRENANT AU MOINS TROIS COUCHES DIFFEREMMENT DOPEES DEPOSEES SUR UN SUBSTRAT ET COMPORTANT UNE PHASE DE DEPOT PAR DECOMPOSITION THERMIQUE D'UN MELANGE GAZEUX SOUS PRESSION ATMOSPHERIQUE A UNE TEMPERATURE INFERIEURE A LA TEMPERATURE DE CRISTALLISATION DU SILICIUM ET UNE PHASE DE RECUIT THERMIQUE EN MILIEU NON IONISE SOUS ATMOSPHERE CONSTITUEE D'HYDROGENE ATOMIQUE.REALISATION PAR CE PROCEDE DE DIODES A FORTE DENSITE DE COURANT ET A TENSION INVERSE ELEVEE.APPLICATIONS DE CES DIODES AUX ECRANS DE VISUALISATION A CRISTAUX LIQUIDES A EFFET THERMO-ELECTRIQUE OU ELLES PEUVENT ETRE INTEGREES DIRECTEMENT SUR LE SUBSTRAT DE CES ECRANS.