PROCEDE DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR
Processes for forming a wafer having SOS structure are provided. A single crystal silicon layer is formed on a principal plane of a sapphire substrate. An amorphous portion is formed in a silicon layer leaving its surface portion of predetermined depth as it is and by injecting Si+ into the single c...
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Main Author | |
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Format | Patent |
Language | French |
Published |
27.06.1986
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Edition | 4 |
Subjects | |
Online Access | Get full text |
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Summary: | Processes for forming a wafer having SOS structure are provided. A single crystal silicon layer is formed on a principal plane of a sapphire substrate. An amorphous portion is formed in a silicon layer leaving its surface portion of predetermined depth as it is and by injecting Si+ into the single crystal silicon layer. This amorphous portion reaches the interface of sapphire substrate. A wafer thus formed is placed on a cooling table in a furnace. The substrate is fixedly bonded onto the cooling table with indium and cooled to a predetermined temperature. A temperature higher than that applied to the sapphire substrate is applied to the silicon layer including the amorphous portion using a heater arranged in the furnace and N2 gas flowing into the furnace. The SOS wafer is then returned to room temperature. |
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Bibliography: | Application Number: FR19810010064 |