SHEAR WAVE MODE PIEZOELECTRIC RESONATOR

• Main Author: Kaitila, Jyrki
• Format: Patent
• Language: English; Finnish
• Published: 26.02.2023
• Subjects: BASIC ELECTRONIC CIRCUITRY; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRICITY; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; MEASURING; METALLURGY; PHYSICS; RESONATORS; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TESTING

According to an aspect, there is provided a structure for a thin-film bulk acoustic resonator (400). The structure comprises a substrate (101, 401) comprising a cavity (104, 404) having at least one slanted flat surface (103, 403) facing away from the cavity (104, 404) and a piezoelectric bulk material layer (102, 402) deposited on said at least one slanted flat surface (103, 403). Erään aspektin mukaan on saatu aikaiseksi rakenne akustista ohutkalvotilavuusaaltoresonaattoria varten (400). Rakenne käsittää substraatin (101, 401), joka käsittää ontelon (104, 404), jolla on ainakin yksi vino tasainen pinta (103, 403), joka osoittaa poispäin ontelosta (104, 404) ja piezosähköisen bulkkimateriaalikerroksen (102, 402), joka on sijoitettu mainitulle ainakin yhdelle vinolle tasaiselle pinnalle (103, 403).