Atomikerroskasvatus jossa ensimmäinen ja toinen lähdeainelaji ovat läsnä samanaikaisesti
A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface i...
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Main Authors | , , , |
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Format | Patent |
Language | Finnish Swedish |
Published |
23.06.2016
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Subjects | |
Online Access | Get full text |
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Summary: | A method that includes performing an atomic layer deposition sequence including at least one deposition cycle, each cycle producing a monolayer of deposited material, the deposition cycle including introducing at least a first precursor species and a second precursor species to a substrate surface in a reaction chamber, wherein both of said first and second precursor species are present in gas phase in said reaction chamber simultaneously. |
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Bibliography: | Application Number: FI20140000361 |