Infrared emitter having a layered structure

• Main Authors: Blomberg, Martti, Kattelus, Hannu
• Format: Patent
• Language: English; Finnish; Swedish
• Published: 15.06.2018
• Subjects: BLASTING; COLORIMETRY; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF; GAMMA RAY OR X-RAY MICROSCOPES; HEATING; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES; IRRADIATION DEVICES; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; LIGHTING; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT; MEASURING; MECHANICAL ENGINEERING; NUCLEAR ENGINEERING; NUCLEAR PHYSICS; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PERFORMING OPERATIONS; PHYSICS; RADIATION PYROMETRY; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR; TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR; TESTING; TRANSPORTING; WEAPONS

A layered infrared emitter structure includes only semi-transparent metal layers, preferably one semi-transparent metal layer (15), and one or more dielectric layers (11, 12, 13, 14, 16, 17) on both sides of the semi-transparent metal layer (15). Further, an electric heating wiring (20) is arranged in or between any of the dielectric layers (11) to heat the semi-transparent metal layer (15) up to a required infrared emission temperature, preferably to a temperature within a range from 400 ̊C to 1000 ̊C. Kerroksellinen infrapunalähetinlaite sisältää vain puoliläpäiseviä metallikerroksia, edullisesti yhden metallikerroksen (15), ja yhden tai useamman dielektrisen kerroksen (10, 11, 12, 13,14, 16, 17) puoliläpäisevän metallikerroksen (15) molemmilla puolilla. Lisäksi sähkölämmityslangoitus (20) on järjestetty johonkin dielektriseen kerrokseen (11) tai dielektristen kerrosten väliin kuumentamaan puoliläpäisevä metallikerros (15) vaadittuun infrapunaemissiolämpötilaan, edullisesti lämpötilaan alueella 400 °C ... 1000 °C.