Puolijohdelaite ja menetelmä puolijohdelaitteen tilan kontrolloimiseksi ja sen valmistamiseksi ja suurtaajuinen integroitu piiri

A semiconductor device includes a conduct structure to which are arranged contacts for a source and a drain, a resonance region including at least two barrier regions, at least one resonator between the barrier regions and a control electrode and which resonance region is arranged between the contac...

Full description

Saved in:
Bibliographic Details
Main Authors BASKIN, LEV M, NEITTAANMAEKI, PEKKA, PLAMENEVSKY, BORIS A
Format Patent
LanguageFinnish
Swedish
Published 30.11.2010
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor device includes a conduct structure to which are arranged contacts for a source and a drain, a resonance region including at least two barrier regions, at least one resonator between the barrier regions and a control electrode and which resonance region is arranged between the contacts. The conduct structure between the contacts is homogeneous and the barrier regions are formed of narrows arranged to the conduct structure. In addition, disclosed are methods to control the state of a semiconductor device and manufacture the same.
Bibliography:Application Number: FI20080005278