Laite, joka on tarkoitettu kiteiden kasvattamiseen Czrochralskin menetelmällä, jossa kasvattamisprosessin aikana kiteitä sekä vedetään sulasta että kierretään akselin ympäri

Head (17) rotates relative to process chamber (1) containing melt. An AC source supplies energy to power-consuming elements (29, 35) in process chamber. First inductive resistor (23) is connected to the head. Second inductive resistor (24) connected to the AC source transfers electrical energy to fi...

Full description

Saved in:
Bibliographic Details
Main Authors ALTEKRUEGER,BURKHARD, BAUMECKER,TOMAS, KATZSCHNER,WERNER, SCHOLLER,JOHANN
Format Patent
LanguageFinnish
Swedish
Published 13.02.2009
Subjects
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online AccessGet full text

Cover

More Information
Summary:Head (17) rotates relative to process chamber (1) containing melt. An AC source supplies energy to power-consuming elements (29, 35) in process chamber. First inductive resistor (23) is connected to the head. Second inductive resistor (24) connected to the AC source transfers electrical energy to first resistor. Electrical lines (27, 28) connect the first resistor to the power-consuming elements. Preferred Features: Even data is transferred via the electrical connecting lines. The rotating head has a hollow shaft (16) around which the first inductive resistor is placed, the second inductive resistor being concentric to that.
Bibliography:Application Number: FI20000001413