Generación de un estado no reversible en una célula de bits que tiene una primera unión de túnel magnética y una segunda unión de túnel magnética

• Main Authors: NOWAK, Matthew Michael, ZHU, Xiaochun, MILLENDORF, Steven M, ASHKENAZI, Asaf, RAO, Hari M, YU, Nicholas K, HSU, Wah Nam, LEE, Kangho, HAO, Wuyang, KIM, Jung Pill, KIM, Tae Hyun, SUH, Jungwon, LI, Xia, KANG, Seung H
• Format: Patent
• Language: Spanish
• Published: 02.07.2019
• Subjects: ELECTRICITY; INFORMATION STORAGE; PHYSICS; STATIC STORES

A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first...