Generación de un estado no reversible en una célula de bits que tiene una primera unión de túnel magnética y una segunda unión de túnel magnética

A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first...

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Bibliographic Details
Main Authors NOWAK, Matthew Michael, ZHU, Xiaochun, MILLENDORF, Steven M, ASHKENAZI, Asaf, RAO, Hari M, YU, Nicholas K, HSU, Wah Nam, LEE, Kangho, HAO, Wuyang, KIM, Jung Pill, KIM, Tae Hyun, SUH, Jungwon, LI, Xia, KANG, Seung H
Format Patent
LanguageSpanish
Published 02.07.2019
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell. The non-reversible state corresponds to a value of the MTJ bitcell that is determined by comparing a first value read at the first MTJ and a second value read at the second MTJ.
Bibliography:Application Number: ES20110752672T