Generación de un estado no reversible en una célula de bits que tiene una primera unión de túnel magnética y una segunda unión de túnel magnética

A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first...

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Main Authors NOWAK, Matthew Michael, ZHU, Xiaochun, MILLENDORF, Steven M, ASHKENAZI, Asaf, RAO, Hari M, YU, Nicholas K, HSU, Wah Nam, LEE, Kangho, HAO, Wuyang, KIM, Jung Pill, KIM, Tae Hyun, SUH, Jungwon, LI, Xia, KANG, Seung H
Format Patent
LanguageSpanish
Published 02.07.2019
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Abstract A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell. The non-reversible state corresponds to a value of the MTJ bitcell that is determined by comparing a first value read at the first MTJ and a second value read at the second MTJ.
AbstractList A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell. The non-reversible state corresponds to a value of the MTJ bitcell that is determined by comparing a first value read at the first MTJ and a second value read at the second MTJ.
Author ASHKENAZI, Asaf
HSU, Wah Nam
ZHU, Xiaochun
SUH, Jungwon
KIM, Tae Hyun
LEE, Kangho
KANG, Seung H
NOWAK, Matthew Michael
RAO, Hari M
LI, Xia
HAO, Wuyang
YU, Nicholas K
MILLENDORF, Steven M
KIM, Jung Pill
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– fullname: YU, Nicholas K
– fullname: HSU, Wah Nam
– fullname: LEE, Kangho
– fullname: HAO, Wuyang
– fullname: KIM, Jung Pill
– fullname: KIM, Tae Hyun
– fullname: SUH, Jungwon
– fullname: LI, Xia
– fullname: KANG, Seung H
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Snippet A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes...
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INFORMATION STORAGE
PHYSICS
STATIC STORES
Title Generación de un estado no reversible en una célula de bits que tiene una primera unión de túnel magnética y una segunda unión de túnel magnética
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