Generación de un estado no reversible en una célula de bits que tiene una primera unión de túnel magnética y una segunda unión de túnel magnética
A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first...
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Main Authors | , , , , , , , , , , , , , |
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Format | Patent |
Language | Spanish |
Published |
02.07.2019
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Subjects | |
Online Access | Get full text |
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Summary: | A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell. The non-reversible state corresponds to a value of the MTJ bitcell that is determined by comparing a first value read at the first MTJ and a second value read at the second MTJ. |
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Bibliography: | Application Number: ES20110752672T |