Método para la fabricación de silicio altamente puro

• Main Authors: ONOUE, Kozo, HIYOSHI, Masataka, DOHNOMAE, Hitoshi, KONDO, Jiro, TOKUMARU, Shinji, NAKAZAWA, Shigeru, KISHIDA, Yutaka
• Format: Patent
• Language: Spanish
• Published: 20.03.2019
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; COMPOUNDS THEREOF; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INORGANIC CHEMISTRY; METALLURGY; NON-METALLIC ELEMENTS; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

Un método para producir silicio de alta pureza caracterizado porque es un método de producción de silicio de alta pureza que produce silicio de alta pureza mediante solidificación unidireccional de silicio fundido materia prima en un recipiente de moldeo, y utiliza como dicho silicio fundido materia prima que tiene una concentración de carbono, de 100 ∼ 1000 ppm en peso, y una concentración de germanio de 50 - 1000 ppm en peso, en donde se impulsa el procedimiento de extracción de calor para dicha solidificación unidireccional, se proporciona un procedimiento de preservación para preservar el estado fundido del silicio fundido en el recipiente de moldeo y mediante este procedimiento de preservación, se forma una capa de contacto de carburo de silicio que es continua y completa de 20 μm de espesor o más sobre la superficie de la pared interna del recipiente de moldeo. Provided are: a method for manufacturing highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method; and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.