Silicon device for the detection of visible and infrared radiation at room temperature (Machine-translation by Google Translate, not legally binding)
Silicon device for the detection of visible and infrared radiation at room temperature. The present invention relates to a device with three layers: two semiconductors, (1) and (2), and an intermediate layer (3) insulator that are based on crystalline silicon. The implantation of impurities with a c...
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Main Authors | , , , , , , , , , , |
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Format | Patent |
Language | English Spanish |
Published |
29.09.2015
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Subjects | |
Online Access | Get full text |
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Summary: | Silicon device for the detection of visible and infrared radiation at room temperature. The present invention relates to a device with three layers: two semiconductors, (1) and (2), and an intermediate layer (3) insulator that are based on crystalline silicon. The implantation of impurities with a concentration that exceeds the solid solubility of said impurity in silicon confers on the device the ability to detect infrared radiation at room temperature. The invention also relates to the method for manufacturing the device of the invention, which includes manufacturing techniques outside the thermodynamic equilibrium. (Machine-translation by Google Translate, not legally binding)
Dispositivo de silicio para la detección de radiación visible e infrarroja a temperatura ambiente. La presente invención se refiere a un dispositivo con tres capas: dos semiconductores, (1) y (2), y una capa intermedia (3) aislante que están basadas en silicio cristalino. La implantación de impurezas con una concentración que supera la solubilidad sólida de dicha impureza en silicio confiere al dispositivo la capacidad de detectar radiación infrarroja a temperatura ambiente. La invención también se refiere al método para fabricar el dispositivo de la invención, que incluye técnicas de fabricación fuera del equilibrio termodinámico. |
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Bibliography: | Application Number: ES20140000241 |