INSTALACION DE PULVERIZACION CATODICA CON DOS MAGNETRONES ALARGADOS

• Main Authors: STRUMPFEL, JOHANNES, ERBKAMM, WOLFGANG, REHN, STANLEY, BEISTER, GUNTER
• Format: Patent
• Language: Spanish
• Published: 01.05.2002
• Edition: 7
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

LA INVENCION SE REFIERE A UNA INSTALACION DE BOMBARDEO ELECTRONICO CON DOS MAGNETRONES COLOCADOS LONGITUDINALMENTE, QUE ESTAN DISPUESTOS ADYACENTEMENTE UNO CON RESPECTO A OTRO, Y CADA UNO DE ELLOS DISPONE DE UN OBJETIVO SOBRE LA SUPERFICIE SUPERIOR. EL OBJETIVO DE LA INVENCION ES INCREMENTAR LA UTILIZACION DEL OBJETIVO EN UNA INSTALACION DE BOMBARDEO ELECTRONICO CON DOS MAGNETRONES QUE DESCANSAN ADYACENTEMENTE UNO CON OTRO. EL OBJETIVO SE OBTIENE DE TAL FORMA QUE LA RESISTENCIA DE DESCARGA DE UN MAGNETRON A LO LARGO DE LA DIRECTRIZ ES TAN HOMOGENEO QUE UNA RESISTENCIA DE DESCARGA PARCIAL DEL PUNTO OBJETIVO SOBRE LA DIRECTRIZ TIENE LA MISMA MAGNITUD QUE LA RESISTENCIA DE DESCARGA PARCIAL DE OTRO PUNTO OBJETIVO SOBRE LA DIRECTRIZ. A sputtering installation has two longitudinally extended magnetrons disposed next to one another and each has a target on an upper side thereof. Increasing utilization of the targets in the sputtering installation is accomplished by homogenizing the discharge resistance of the magnetrons along the directrix such that a partial discharge resistance of a target point on the directrix has the same magnitude as the partial discharge resistance of a different target point on the directrix.