GATE LINK ACROSS GATE CUT IN SEMICONDUCTOR DEVICES

• Main Authors: OBRIEN, Thomas, LAKHANI, Ankit, ACHARYA, Saurabh, GANESAN, Krishna, GULER, Leonard, LIU, Shengsi, KHANDELWAL, Nidhi, RAMANATHAN, Meenakshisundaram, LUTHRA, Prabhjot, ENGEL, Clifford, ZHU, Baofu
• Format: Patent
• Language: English; French; German
• Published: 25.09.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

Techniques to form an integrated circuit having a gate cut between adjacent pairs of semiconductor devices. At least one of those adjacent pairs of semiconductor devices includes a conductive link (e.g., a bridge) through the gate cut to connect the adjacent gates together. In an example, neighboring semiconductor devices each include a semiconductor region extending between a source region and a drain region, and a gate structure extending over the semiconductor regions of the neighboring semiconductor devices. A gate cut is present between each pair of neighboring semiconductor devices thus interrupting the gate structure and isolating the gate of one semiconductor device from the gate of the other semiconductor device. A conductive link extends over a given gate cut to electrically connect the adjacent gate electrodes together. A dielectric layer extends over the bridged gate electrodes and the conductive link, and may have different thicknesses over those respective features.