SEMICONDUCTOR DEVICE

A semiconductor device includes a first electrode (11), a second electrode (14), a first semiconductor layer (21+22), a third electrode (12), a second semiconductor layer (23), a third semiconductor layer (24), a fourth electrode (13), and a fourth semiconductor layer (25). The third semiconductor l...

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Bibliographic Details
Main Authors YASUTAKE, Takuya, KACHI, Tsuyoshi, SAITO, Yasunobu
Format Patent
LanguageEnglish
French
German
Published 18.09.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a first electrode (11), a second electrode (14), a first semiconductor layer (21+22), a third electrode (12), a second semiconductor layer (23), a third semiconductor layer (24), a fourth electrode (13), and a fourth semiconductor layer (25). The third semiconductor layer extends from the second semiconductor layer toward the first electrode side. A lower end (24a) of the third semiconductor layer at the first electrode side is positioned further toward the first electrode side than the lower surface of the second semiconductor layer and is separated from the insulating body. The fourth electrode faces the second semiconductor layer via an other portion (32) of an insulating body (30). The fourth semiconductor layer is located between the second semiconductor layer and the second electrode and electrically connected with the second electrode.
Bibliography:Application Number: EP20230192327