SEMICONDUCTOR MEMORY DEVICES AND METHOD OF MANUFACTURING THE SAME

In some embodiments, a semiconductor memory device includes a peripheral circuit structure, and a first and a second cell array structure. The peripheral circuit structure includes a circuit board, a peripheral circuit on the circuit board, a first insulating layer, and a plurality of first bonding...

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Bibliographic Details
Main Authors BYEON, Daeseok, FUTATSUYAMA, Takuya
Format Patent
LanguageEnglish
French
German
Published 11.09.2024
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:In some embodiments, a semiconductor memory device includes a peripheral circuit structure, and a first and a second cell array structure. The peripheral circuit structure includes a circuit board, a peripheral circuit on the circuit board, a first insulating layer, and a plurality of first bonding pads on the first insulating layer. The first cell array structure includes a first memory cell array, a first conductive plate structure, a second insulating layer, and pluralities of second and third bonding pads on the second insulating layer. The second cell array structure includes a second memory cell array, a second conductive plate structure, a third insulating layer, and a plurality of fourth bonding pads on the third insulating layer. The first cell array structure and the second cell array structure are sequentially stacked in a vertical direction on the peripheral circuit structure.
Bibliography:Application Number: EP20240152566