THYRISTOR AND METHOD FOR MANUFACTURING SAME

• Main Authors: ENDO, Kanae, SHIBATA, Yukihiro, INOUE, Tadashi
• Format: Patent
• Language: English; French; German
• Published: 28.08.2024
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

There is provided a thyristor with desensitized gate sensitivity. The invention includes: a first P-type semiconductor layer; a first N-type semiconductor layer disposed in contact with the first P-type semiconductor layer; a second P-type semiconductor layer disposed in contact with the first N-type semiconductor layer; a second N-type semiconductor layer disposed in contact with the second P-type semiconductor layer; a third P-type semiconductor layer that is disposed in contact with the second P-type semiconductor layer and has an impurity concentration higher than that of the second P-type semiconductor layer; a gate electrode; a cathode electrode; and a fourth P-type semiconductor layer that is in contact with each of the second P-type semiconductor layer and the second N-type semiconductor layer and has an impurity concentration higher than that of the second P-type semiconductor layer. The third P-type semiconductor layer and the fourth P-type semiconductor layer are separated from each other by the second P-type semiconductor layer, and the third P-type semiconductor layer and the second N-type semiconductor layer are separated from each other by the second P-type semiconductor layer.